View FDPF44N25T_1239591.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDPF44N25 250V N-Channel MOSFET
UniFET
FDPF44N25
250V N-Channel MOSFET Features
* 18A, 250V, RDS(on) = 0.069 @VGS = 10 V * Low gate charge ( typical 47 nC) * Low Crss ( typical 60 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDPF44N25
250 18 10.8 72 30 2055 18 5.6 4.5 56 0.45 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Min.
---
Max.
2.23 62.5
Unit
C/W C/W
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDPF44N25 Rev A
FDPF44N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDPF44N25 FDPF44N25
Device
FDPF44N25T FDPF44N25
Package
TO-220F Potting Type TO-220F
TC = 25C unless otherwise noted
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 250V, VGS = 0V VDS = 200V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VDS = 40V, ID = 9A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
250 -----3.0 ------
Typ.
-0.25 -----0.058 32 2210 450 60 53 402 85 112 47 18 24
Max Units
--1 10 100 -100 5.0 0.069 -2870 585 90 117 814 179 234 61 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 125V, ID = 44A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 200V, ID = 44A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 18A VGS = 0V, IS = 44A dIF/dt =100A/s
(Note 4)
------
---195 1.8
18 72 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10.1mH, IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 18A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
2 FDPF44N25 Rev A
www.fairchildsemi.com
FDPF44N25 250V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
10
2
10
2
ID, Drain Current [A]
10
1
ID, Drain Current [A]
150 C
10
1
o
25 C -55 C
Notes : 1. VDS = 40V 2. 250s Pulse Test
o
o
10
0
Notes : 1. 250s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.10
RDS(ON) [ ], Drain-Source On-Resistance
0.08
VGS = 10V
0.06
IDR, Reverse Drain Current [A]
10
2
10
1
150
25
Notes : 1. VGS = 0V s 2. 250 Pulse Test
VGS = 20V
0.04
Note : TJ = 25
0
25
50
75
100
125
150
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
5000
VGS, Gate-Source Voltage [V]
10
VDS = 50V VDS = 125V VDS = 200V
Capacitances [pF]
4000
8
Coss Ciss
3000
6
2000
4
1000
Crss
Note ; 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 44A
0 -1 10
0
10
0
10
1
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FDPF44N25 Rev A
www.fairchildsemi.com
FDPF44N25 250V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 9 A
0.9
Notes : 1. VGS = 0 V A 2. ID = 250
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
20
10
2
10 s 100 s
ID, Drain Current [A]
10
1
10
0
Operation in This Area is Limited by R DS(on)
100 ms DC
ID, Drain Current [A]
1 ms 10 ms
10
10
-1
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z JC t) = 2 .2 3 /W M a x . ( 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z JC t) (
ZJC Thermal Response (t),
10
-1
0 .0 5 0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
10
-2
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4 FDPF44N25 Rev A
www.fairchildsemi.com
FDPF44N25 250V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 FDPF44N25 Rev A
www.fairchildsemi.com
FDPF44N25 250V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 FDPF44N25 Rev A
www.fairchildsemi.com
FDPF44N25 250V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM
FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FDPF44N25 Rev A
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FDPF44N25T

	To Download FDPF44N25T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .